Novel slurry injector device for chemical mechanical. Sample hardness and integrity must be considered when deciding the process parameters. First, the chemical composition of a slurry plays an important part in the gst cmp process. Patents assigned to ferro corporation justia patents search. This process uses a tool with a rotating wafer carrier single or multihead and a polishing. Materials free fulltext effects of the layer height. Electrochemical behavior of aluminum during chemical. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a. The reasons were the need to planarize what was then advanced nextgeneration ic devices in a manner more reproducible and reliable than existing technology allowed.
Hamid akbari moayyer, malek naderi, jamshid aghazadeh mohandesi, ali ramazani. Wiley also publishes its books in a variety of electronic formats. Chemical mechanical polishing slurry for amorphous. Effect of slurry composition on the chemical mechanical polishing of. The fundamental mechanism of cmp is to create soften surface layer by chemical reaction and then, mechanical. Chemical mechanical planarization slurry distribution system.
Dielectric chemical mechanical polishing cmp was implemented in semiconductor fabrication as a. Manure slurry, a mixture of animal waste, organic matter, and sometimes water often known simply as slurry in agricultural use, used as fertilizer after ageing in a slurry pit. Chemical mechanical polishing planarization cmp is a critical step in semiconductor manufacturing. The cmp process combines the chemical acidic or basic effect of the slurry, which contains microabrasives with the mechanical effect provided by polishing to reduce topography on the wafer surface.
Its importance becomes highly underscored at the advanced device toward sub 14 nm scaling. An abrasive substance used in chemical mechanical polishing. Control of nanomaterials used in chemical mechanical. The slurry typically consists of abrasive particles in an alkaline medium.
Basic care recognizing metals and their corrosion products. Zantye university of south florida follow this and additional works at. Lynn fuller, professor cmp page 2 rochester institute of technology microelectronic engineering cmp chemical mechanical planarization. Reference book of standard spectra for identification and interpretation of x. In this study, cmp performance of three electronic materials was investigated. The quaternized aromatic heterocycle imparts a polishing. We deposited 120nmthick ru film with a 10nmthick ti adhesion layer by physical vapor sputtering. This paper describes a novel slurry injector device for chemical mechanical planarization cmp. Chemical mechanical polishing cmp is one of the most essential processes in semiconductor manufacturing. Strategies for optimal chemical mechanical polishing cmp slurry design. An acidic slurry composition for use in chemical mechanical polishing including an acid ph adjuster and a cationic polishing suppressant comprising a quaternized aromatic heterocycle.
Nanomaterials nm of silica sio 2, cerium ceo 2, and alumina al 2 o 3 are used in liquid slurries by a number of industrial applications, including chemical mechanical polishing planarization cmp. One of its limitations, however, is nonuniform polishing. Slurry design for chemical mechanical polishing request pdf. The pad and wafer are pressed together by a dynamic polishing head and held in place by a plastic retaining ring.
Cmpmic conference, numerical flow visualization of slurry in a chemical mechanical planarization process, 1998, p. Cmp chemical mechanical planarization solutions for the integration of highk metal gate technologies. Chemical mechanical polishing or planarization is a process of smoothing surfaces with the. Although the application of the slurry was an advance in the semiconductor technology, the slurry composition remained unchanged from the composition used in lens polishing. Levert j, shan l, danyluk s1998 pressure distribution at silicon polishing. Corrosion inhibitors in sodium periodate slurry for. Advances in chemical mechanical planarization cmp, chapter. The device exhibits superior properties compared to the standard pad center injection method as evidenced by. The dependence of the removal rate with sample composition is given by prestons equation through the preston coefficient, though the preston coefficient also considers the abrassive used, slurry, etc. Chemical mechanical polishing, cabot microelectronics. In the relentless progress to make computer chips faster, smaller, and cheaper, the cmp process plays a prominent role.
Among other the planarization technologies, chemical mechanical planarization cmp is the unique global planarization technology, which makes it be continuously investigated. Part of the springer series in materials science book series ssmaterials. Analysis of slurry flow in chemicalmechanical polishing. Effect of slurry composition on the chemical mechanical polishing of thin diamond films. The kemcol 15 machine is ideal for chemical mechanical polishing cmp, and cerium oxide based polishing applications. Meat slurry, a mixture of finely ground meat and water, centrifugally dewatered and used as food. Effect of the etching on chemical mechanical planarization. We have studied the chemical mechanical polishing cmp characteristics of mixed abrasive slurry mas retreated by adding of zirconium oxide zro2 abrasives within 1. Advances in chemical mechanical planarization cmp 1st. Pdf slurry components in metal chemical mechanical.
In cmp, the mechanical properties of the wafer itself must be considered too. Normally, for metal cmp, slurry chemistry is such that it induces the formation of an oxide hydration layer on the. Rosen, surfactants and interfacial phenomena, john wiley. It is now well recognized that the slurry feed rate, velocity, pressure, temperature, and ph, as well as abrasive particle size and material, and pad elasticity and hardness have profound effects on the effectiveness of chemicalmechanical polishing. A slurry for chemical mechanical polishing cmp of a copper or silver containing. Chemical mechanical planarization of electronic materials. Advances in chemical mechanical planarization cmp provides the latest information on a mainstream process that is critical for highvolume, highyield semiconductor manufacturing, and even more so as. The slurry was composed of abrasives, a ph titrant, sodium periodate naio 4, a corrosion inhibitor, and deionized water. Gupta, in applied plastics engineering handbook, 2011. A cupric salt cmp slurry was employed to improve the throughput and surface finish on a conventional polishing machine. Effect of slurry composition on the chemical mechanical. Effect of layer thickness and printing orientation on mechanical. Processing, reliability and integration issues in chemical mechanical planarization parshuram b.
Chemicalmechanical planarization of semiconductor materials pp 215249 cite. Evaluation of chemical mechanical polishingbased surface. The process combines the chemical acidic or basic effect of the slurry, which contains microabrasives with the mechanical effect provided by polishing to reduce the topography on the wafer or. Pdf nanocrystalline diamond ncd thin films grown by chemical vapour deposition have an intrinsic surface roughness, which hinders the. Us6829b2 chemicalmechanical polishing slurry for polishing. Abrasive for chemical mechanical polishing intechopen. The rotating pad transports the slurry underneath the wafer and operates to polish and planarize flatten the wafer through chemical and mechanical.
Chemical vapor deposited cvd diamond films, as a first materials, was fabricated using hotfilament chemical. The composition of cmp slurry wastewaters is described, along with the principal physical and chemical. Chemical mechanical polishing composition and process. The machine is based on the popular kemet 15 lapping and polishing machine, but incorporates stainless steel elements in place of painted components for longer life, and contamination free polishing. Chemischmechanisches polieren, auch chemischmechanisches planarisieren cmp, engl. In order to enable highk metal gate technology, new chemical mechanical. The transformation in electronic devices that has occurred in the past few decades has relied greatly on the efficiency and effectiveness of planarization using slurry polishing. The process uses an abrasive and corrosive chemical slurry commonly a colloid in conjunction with a polishing pad and retaining ring, typically of a greater diameter than the wafer. Chemical mechanical planarization pt01003jt 4 a 2phase process is adopted in our inlaid copper pattern wafer polishing, which means changing slurry and working conditions during the copper. As a pioneer in chemical mechanical planarization cmp slurries, cabot microelectronics commercialized our original semisperse products in the 1980s for 250nm cmp applications. Preparation and characterization of slurry for chemical mechanical. Molecular dynamics simulation of mechanical properties. This process is poorly understood and in need of optimisation.
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